MRF8S9220HSR3【PDF 1/14 页】FET RF N-CH 900MHZ 28V NI780S

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MRF8S9220HR3 MRF8S9220HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 920 to

960 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Single-Carrier W-CDMA Performance: VDD

= 28 Volts, I

1600

mA,

Pout

= 65 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84

MHz, Input Signal PAR = 7.5

dB @ 0.01% Probability on

CCDF.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

920 MHz

19.7

35.1

6.1

-37.4

940 MHz

19.8

35.3

6.2

-37.5

960 MHz

19.4

35.7

6.1

-37.4

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW

Output Power (3 dB Input Overdrive from Rated Pout), Designed for

Enhanced Ruggedness

Typical Pout

@ 1 dB Compression Point

220 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-0.5, +70

Vdc

Gate-Source Voltage

VGS

-6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature (1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 81?°C, 65 W CW, 28 Vdc, IDQ

= 1600 mA

Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ

= 1600 mA

RθJC

0.39

0.32

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF8S9220H

Rev. 0, 11/2009

Freescale Semiconductor

Technical Data

920-960 MHz, 65 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

MRF8S9220HR3

MRF8S9220HSR3

CASE 465A-06, STYLE 1

NI-780S

MRF8S9220HSR3

CASE 465-06, STYLE 1

NI-780

MRF8S9220HR3

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